中圖分類號： TN86
文獻標識碼： A
DOI：10.16157/j.issn.0258-7998.211471
中文引用格式： 吳鍵澄，楊汝，余連德，等. 基于場路耦合的反激變換器板級輻射研究[J].電子技術應用，2021，47(7)：5-11.
英文引用格式： Wu Jiancheng，Yang Ru，Yu Liande，et al. Research on board level radiation of flyback converter based on field circuit coupling[J]. Application of Electronic Technique，2021，47(7)：5-11.

Research on board level radiation of flyback converter based on field circuit coupling

Abstract： Radiation interference is one of the bottlenecks that restrict the high frequency and miniaturization of power products. Based on the simulation idea of field circuit coupling, the electromagnetic field finite element model of MOSFET and the equivalent high frequency circuit model of high frequency transformer are established. Combined with the PCB network parameters extracted from SIwave,the board level radiation interference of a 5 W output flyback converter is co-simulated, and the influence of two high frequency transformer models on the far-field simulation results is compared. The experimental results show that the simulation results of 3 m far-field within 230 MHz are in good agreement with the measured results, which verifies the correctness of the simulation method, and the simplified two capacitance model of transformer has wider applicability; the obtained near-field electromagnetic field distribution shows that MOSFET is the main source of electric field radiation, and the rectifier diode at the secondary side of transformer is the main source of magnetic field radiation.

Key words : switching mode power supply；flyback converter；radiation interference；field circuit coupling